Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- N° de stock RS:
- 228-2873
- Référence fabricant:
- SiHH080N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,50 €
(TVA exclue)
15,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 594 unité(s) expédiée(s) à partir du 25 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,25 € | 12,50 € |
| 20 - 48 | 5,19 € | 10,38 € |
| 50 - 98 | 4,88 € | 9,76 € |
| 100 - 198 | 4,625 € | 9,25 € |
| 200 + | 3,745 € | 7,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2873
- Référence fabricant:
- SiHH080N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 32A Continuous Drain Current - SiHH080N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switching device designed for demanding power conversion and control tasks. It operates across a wide temperature range and is intended for surface-mounted applications where compact, robust switching performance is required. The component delivers substantial continuous current capability while supporting high drain-to-source voltages for use in industrial and electronic power stages.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
What gate voltage range is safe for control circuitry?
The gate may be driven up to 30V relative to source
control logic should remain within this limit to protect the gate oxide.
How does the package affect board-level thermal design?
The PowerPAK surface-mount package with four pins requires thermal vias or heatsinking on the PCB to dissipate up to 184W under specified conditions.
What environmental extremes can the device withstand?
It is rated for continuous operation down to -55°C and up to 150°C, allowing use across wide ambient and junction temperature swings.
What type of channel conduction does the device provide?
It is an enhancement-mode N-channel device, conducting when a positive gate-to-source voltage is applied.
Liens connexes
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK075N65E-T1-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH075N65E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3