Vishay E Type N-Channel Power MOSFET, 32 A, 600 V Enhancement, 8-Pin PowerPAK
- N° de stock RS:
- 653-084
- Référence fabricant:
- SIHR120N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
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5,52 €
(TVA exclue)
6,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 5,52 € |
| 10 - 49 | 5,36 € |
| 50 - 99 | 5,20 € |
| 100 + | 4,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-084
- Référence fabricant:
- SIHR120N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Length | 10.42mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Length 10.42mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 32A Maximum Continuous Drain Current - SIHR120N60E-T1-GE3
This power MOSFET is a high-voltage switching transistor designed for surface-mount power conversion and control in industrial systems. It operates as an N-channel enhancement device and is suited to applications requiring robust thermal tolerance and sustained power handling in demanding electrical environments.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 32A continuous current supports substantial load currents • 0.12Ω Rds(on) minimises conduction losses at rated conditions • 278W power dissipation allows significant heat throughput • 29nC typical gate charge speeds switching transitions • 150°C maximum junction temperature endures elevated thermal stress
Applications
• Suitable for high-voltage motor drive power stages • Ideal for switched-mode power supplies in industrial equipment • Used for AC/DC converters requiring high dissipation capacity • Can be used for electronic ballast and lighting control circuits • Suitable for power switching in automation and control panels
What mounting style does it require for board assembly?
It is supplied in a leadless PowerPAK surface-mount package with eight pins, intended for soldered attachment to PCB lands and thermal vias for heat removal.
What gate drive considerations should I allow for?
The gate-source tolerance is ±30V, and the typical gate charge of 29nC requires a driver capable of sourcing and sinking sufficient current for the intended switching frequency.
How does its temperature range affect deployment?
The device is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient and elevated-junction scenarios provided thermal management is implemented.
What electrical limits protect against overvoltage or excessive dissipation?
The maximum drain-source voltage is 600V and the rated power dissipation is 278W
designs should include appropriate clamping and thermal pathways to prevent exceedance.
Liens connexes
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