Vishay E Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3

N° de stock RS:: 653-079
Référence fabricant:: SIHR100N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

9 264,00 €

(TVA exclue)

11 208,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	3,088 €	9 264,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-079
Référence fabricant:: SIHR100N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.105Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	347W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.42mm
	Standards/Approvals	RoHS
	Width	8mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.105Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 347W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.42mm
	Standards/Approvals RoHS
	Width 8mm
	Automotive Standard No

Datasheet - SIHR100N60E-T1-GE3

Pays d'origine :: CN

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60E-T1-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and control tasks in industrial electronics. It operates as a surface-mount transistor suitable for power conversion and high-voltage switching environments, offering a balance of voltage handling and thermal endurance for use in demanding assemblies.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching capability • 38A continuous drain current supports substantial load currents • 0.105Ω Rds(on) minimises conduction losses during operation • 347W power dissipation allows sustained thermal loading • 34nC typical gate charge permits efficient gate-drive control • -55°C to 150°C operating range supports extreme-temperature operation

Applications

• Suitable for high-voltage power converters in industrial automation • Ideal for motor-drive front-ends requiring robust switching • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in electrical systems • Used with gate drivers in high-voltage inverter designs

What mounting style does it require for assembly?

It is designed for surface mounting in a PowerPAK package, requiring standard SMT reflow profiles and appropriate copper planning for heat dissipation.

How does gate-drive voltage affect switching?

The device tolerates up to 30V on the gate relative to source

utilising recommended gate voltages optimises turn-on speed while avoiding gate overvoltage.

What thermal considerations are needed for high-power applications?

Given the 347W power dissipation rating, adequate PCB copper area and thermal vias are necessary to transfer heat away from the package to maintain junction temperatures below maximum limits.

Is this device suitable for automotive designs?

It is not specified as automotive-grade, so suitability depends on system-level requirements and any additional qualification needed by the designer.