ROHM AG091FLD3HRB N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL
- N° de stock RS:
- 687-462
- Référence fabricant:
- AG091FLD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
1,98 €
(TVA exclue)
2,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 82 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,99 € | 1,98 € |
| 20 - 48 | 0,87 € | 1,74 € |
| 50 - 198 | 0,785 € | 1,57 € |
| 200 - 998 | 0,63 € | 1,26 € |
| 1000 + | 0,62 € | 1,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-462
- Référence fabricant:
- AG091FLD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG091FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG091FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.5mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.
Low on resistance for improved efficiency and reduced heat generation
AEC Q101 qualified, ensuring high reliability in automotive applications
100% avalanche tested for enhanced safety and durability
Wide operating junction temperature range from -55 to +175 °C for versatile use
Robust power dissipation capacity of 76W to handle significant loads
Tape packaging facilitates ease of handling and assembly in manufacturing environments
Embossed packaging specifications ensure secure dynamics during transport
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