ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL
- N° de stock RS:
- 687-358
- Référence fabricant:
- RD3L08BBJHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
3,53 €
(TVA exclue)
4,272 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,765 € | 3,53 € |
| 20 - 48 | 1,555 € | 3,11 € |
| 50 - 198 | 1,40 € | 2,80 € |
| 200 - 998 | 1,12 € | 2,24 € |
| 1000 + | 1,10 € | 2,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-358
- Référence fabricant:
- RD3L08BBJHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.
Optimized for efficiency with low on-state resistance, ensuring reduced power loss
Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C
Suitable for high-current applications with a continuous drain current capability of ±80A
AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards
Embossed tape packaging facilitates automated assembly processes
Fully avalanche rated, guaranteeing reliable operation under transient conditions
Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components
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