ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- N° de stock RS:
- 687-458
- Référence fabricant:
- RD3L08DBLHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
4,20 €
(TVA exclue)
5,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 2,10 € | 4,20 € |
| 20 - 48 | 1,855 € | 3,71 € |
| 50 - 198 | 1,67 € | 3,34 € |
| 200 - 998 | 1,345 € | 2,69 € |
| 1000 + | 1,30 € | 2,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-458
- Référence fabricant:
- RD3L08DBLHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.
Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer
Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads
Features a wide drain-source voltage of 60V suitable for various high-voltage applications
All products are RoHS compliant, supporting environmentally friendly designs
100% avalanche tested for increased reliability and component longevity
Designed in a DPAK TO-252 package for easy mounting in compact circuits
Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions
Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications
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