ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- N° de stock RS:
- 687-468
- Référence fabricant:
- RD3L04BBJHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
4,18 €
(TVA exclue)
5,06 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 2,09 € | 4,18 € |
| 20 - 48 | 1,835 € | 3,67 € |
| 50 - 198 | 1,655 € | 3,31 € |
| 200 - 998 | 1,34 € | 2,68 € |
| 1000 + | 1,30 € | 2,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-468
- Référence fabricant:
- RD3L04BBJHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L04BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L04BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.
Low on resistance promotes energy efficiency
AEC Q101 qualification ensures high reliability in automotive applications
100% avalanche testing provides assurance of performance under stress
Compatible with a wide temperature range from -55°C to 175°C for versatile usage
Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions
Complete electrical characteristics at 25°C allow precise application in designs
Embossed packaging guarantees secure and efficient storage and handling
Optimised for various applications, including ADAS, infotainment, and lighting
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