ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL
- N° de stock RS:
- 687-438
- Référence fabricant:
- AG185FGD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
2,48 €
(TVA exclue)
3,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,24 € | 2,48 € |
| 20 - 48 | 1,09 € | 2,18 € |
| 50 - 198 | 0,985 € | 1,97 € |
| 200 - 998 | 0,79 € | 1,58 € |
| 1000 + | 0,775 € | 1,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-438
- Référence fabricant:
- AG185FGD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG185FGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG185FGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.
Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation
Rated for a continuous drain current of 80A, suitable for robust applications
Provides a high power dissipation capability of 96W for demanding tasks
Designed for a maximum drain-source voltage of 40V ensuring versatility in applications
AEC Q101 qualified, ensuring high reliability in automotive use
Pb free plating and RoHS compliance reflect environmentally conscious production
Suitable for various automotive systems, enhancing system performance and longevity
Features a compact DPAK package for efficient space utilisation on PCB designs
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