ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL
- N° de stock RS:
- 687-440
- Référence fabricant:
- RD3L08CBLHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
2,46 €
(TVA exclue)
2,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,23 € | 2,46 € |
| 20 - 48 | 1,085 € | 2,17 € |
| 50 - 198 | 0,97 € | 1,94 € |
| 200 - 998 | 0,785 € | 1,57 € |
| 1000 + | 0,77 € | 1,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-440
- Référence fabricant:
- RD3L08CBLHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08CBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08CBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 175°C | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.
Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.
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