ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL
- N° de stock RS:
- 687-464
- Référence fabricant:
- RD3G08DBKHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
1,96 €
(TVA exclue)
2,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 72 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,98 € | 1,96 € |
| 20 - 48 | 0,865 € | 1,73 € |
| 50 - 198 | 0,775 € | 1,55 € |
| 200 - 998 | 0,625 € | 1,25 € |
| 1000 + | 0,61 € | 1,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-464
- Référence fabricant:
- RD3G08DBKHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RD3G08DBKHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Length | 10.5mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RD3G08DBKHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.8mm | ||
Length 10.5mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.
Low on resistance for reduced energy losses during operation
High continuous drain current capability of 80A for robust performance
Power dissipation rating of 76W for reliable operation in high-power applications
Avalanche current rating of 30A, ensuring durability during transient conditions
AEC Q101 qualification for reliability in automotive applications
RoHS compliant with Pb free plating, aligning with environmental standards
Includes packaging specifications like embossed tape for efficient handling
Multiple voltage ratings to cater to diverse circuit designs
Liens connexes
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