ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL
- N° de stock RS:
- 687-464
- Référence fabricant:
- RD3G08DBKHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
1,96 €
(TVA exclue)
2,38 €
(TVA incluse)
Ajouter 98 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 15 juillet 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,98 € | 1,96 € |
| 20 - 48 | 0,865 € | 1,73 € |
| 50 - 198 | 0,775 € | 1,55 € |
| 200 - 998 | 0,625 € | 1,25 € |
| 1000 + | 0,61 € | 1,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-464
- Référence fabricant:
- RD3G08DBKHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 (TL) | |
| Series | RD3G08DBKHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.8 mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 (TL) | ||
Series RD3G08DBKHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.8 mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.
Low on resistance for reduced energy losses during operation
High continuous drain current capability of 80A for robust performance
Power dissipation rating of 76W for reliable operation in high-power applications
Avalanche current rating of 30A, ensuring durability during transient conditions
AEC Q101 qualification for reliability in automotive applications
RoHS compliant with Pb free plating, aligning with environmental standards
Includes packaging specifications like embossed tape for efficient handling
Multiple voltage ratings to cater to diverse circuit designs
Liens connexes
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