ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL
- N° de stock RS:
- 687-353
- Référence fabricant:
- AG194FPD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
4,03 €
(TVA exclue)
4,876 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 2,015 € | 4,03 € |
| 20 - 98 | 1,775 € | 3,55 € |
| 100 - 198 | 1,595 € | 3,19 € |
| 200 + | 1,255 € | 2,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-353
- Référence fabricant:
- AG194FPD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 (TL) | |
| Series | AG194FPD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 (TL) | ||
Series AG194FPD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.
Offers a low on resistance of 6.2mΩ for improved efficiency
Rated for continuous drain current of 80A, suitable for high-power applications
Features a breakdown voltage of 100V providing robustness against voltage spikes
AEC Q101 qualified, ensuring reliability in automotive environments
Avalanche tested, allowing for safe operation under transient conditions
Pb free and RoHS compliant, aligning with environmental standards
Ideal for automotive systems, enhancing power management capabilities
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