onsemi NXH N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- N° de stock RS:
- 277-063
- Référence fabricant:
- FDMS8333LN
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 10 unités)*
7,01 €
(TVA exclue)
8,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,701 € | 7,01 € |
| 100 - 240 | 0,665 € | 6,65 € |
| 250 - 490 | 0,617 € | 6,17 € |
| 500 - 990 | 0,568 € | 5,68 € |
| 1000 + | 0,547 € | 5,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-063
- Référence fabricant:
- FDMS8333LN
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NXH | |
| Package Type | Power 56 | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Height | 1.1mm | |
| Width | 5.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NXH | ||
Package Type Power 56 | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Height 1.1mm | ||
Width 5.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
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