onsemi NXH Type N-Channel MOSFET, 145 A, 1200 V Enhancement, 18-Pin PIM18 NXH008P120M3F1PTG
- N° de stock RS:
- 277-050
- Référence fabricant:
- NXH008P120M3F1PTG
- Fabricant:
- onsemi
Sous-total (1 unité)*
89,22 €
(TVA exclue)
107,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 28 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 89,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-050
- Référence fabricant:
- NXH008P120M3F1PTG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PIM18 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 18 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 34.2W | |
| Typical Gate Charge Qg @ Vgs | 419nC | |
| Forward Voltage Vf | 6.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PIM18 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 18 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 34.2W | ||
Typical Gate Charge Qg @ Vgs 419nC | ||
Forward Voltage Vf 6.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power Module contains an 8 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all housed in an F1 package. This module is designed for high-efficiency power applications, making it ideal for use in solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Press fit pins
Pb free
Halide free and RoHS compliant
Liens connexes
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