onsemi NXH Type N-Channel MOSFET, 42 A, 1200 V Enhancement, 18-Pin PIM18 NXH030P120M3F1PTG
- N° de stock RS:
- 277-056
- Référence fabricant:
- NXH030P120M3F1PTG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
61,97 €
(TVA exclue)
74,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 27 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 61,97 € |
| 10 + | 55,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-056
- Référence fabricant:
- NXH030P120M3F1PTG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PIM18 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 18 | |
| Maximum Drain Source Resistance Rds | 38.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PIM18 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 18 | ||
Maximum Drain Source Resistance Rds 38.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power Module contains a 30 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all housed in an F1 package. This module is designed for high-efficiency power conversion and is ideal for applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Press fit pins
Pb free
Halide free and RoHS compliant
Liens connexes
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