Infineon HEXFET Type N-Channel MOSFET, 43 A, 150 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4996
- Référence fabricant:
- IRF3415PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
93,00 €
(TVA exclue)
112,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 50 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 1 000 unité(s) expédiée(s) à partir du 28 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,86 € | 93,00 € |
| 100 - 200 | 1,637 € | 81,85 € |
| 250 - 450 | 1,525 € | 76,25 € |
| 500 - 950 | 1,414 € | 70,70 € |
| 1000 + | 1,321 € | 66,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4996
- Référence fabricant:
- IRF3415PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Width | 4.69mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Width 4.69mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
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