Infineon HEXFET Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220

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Sous-total (1 paquet de 5 unités)*

8,34 €

(TVA exclue)

10,09 €

(TVA incluse)

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le paquet*
5 - 451,668 €8,34 €
50 - 1201,202 €6,01 €
125 - 2451,116 €5,58 €
250 - 4951,036 €5,18 €
500 +0,968 €4,84 €

*Prix donné à titre indicatif

N° de stock RS:
688-6926
Numéro d'article Distrelec:
304-43-450
Référence fabricant:
IRFB3806PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.66mm

Width

4.82 mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

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Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

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A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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