Infineon HEXFET Type N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 688-6948
- Numéro d'article Distrelec:
- 302-84-037
- Référence fabricant:
- IRFB4228PBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
3,54 €
(TVA exclue)
4,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 827 unité(s) expédiée(s) à partir du 04 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 3,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6948
- Numéro d'article Distrelec:
- 302-84-037
- Référence fabricant:
- IRFB4228PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 330W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Height | 8.77mm | |
| Length | 1.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 330W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Height 8.77mm | ||
Length 1.3mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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