Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- N° de stock RS:
- 827-3944
- Référence fabricant:
- IRFB38N20DPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,72 €
(TVA exclue)
19,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 965 unité(s) expédiée(s) à partir du 15 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,144 € | 15,72 € |
| 50 - 120 | 2,986 € | 14,93 € |
| 125 - 245 | 2,858 € | 14,29 € |
| 250 - 495 | 2,674 € | 13,37 € |
| 500 + | 2,516 € | 12,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-3944
- Référence fabricant:
- IRFB38N20DPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Length 10.67mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF
This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.
Features & Benefits
• Supports a maximum continuous drain current of 43A
• Provides a low Rds(on) of 54mΩ to minimise energy loss
• Capable of withstanding drain-source voltages up to 200V
• High operating temperature tolerance ranging from -55°C to +175°C
• Designed for high-speed switching applications with low gate charge
• Integrates effectively into DC-DC converters and power supplies
Applications
• Utilised in high-frequency DC-DC converters for efficient power management
• Suitable for in plasma display panels
• Employed in industrial automation systems requiring consistent switching
• Used in power supplies where thermal efficiency is crucial
• Ideal for electronic designs needing high performance at elevated temperatures
What kind of currents can it handle in high-temperature applications?
It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.
How does this component perform in high-frequency applications?
It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.
What packaging options are available for this product?
It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.
Can this be used in conjunction with other power management devices?
Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.
What measures should be taken for installation?
Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.
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