Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF
- N° de stock RS:
- 257-9354
- Référence fabricant:
- IRFB5615PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 100 unités)*
99,30 €
(TVA exclue)
120,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 900 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 100 - 100 | 0,993 € | 99,30 € |
| 200 - 400 | 0,814 € | 81,40 € |
| 500 + | 0,764 € | 76,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9354
- Référence fabricant:
- IRFB5615PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 35A Maximum Continuous Drain Current - IRFB5615PBF
This MOSFET is a through-hole power transistor designed for switching and power conversion in demanding environments. It operates as an enhancement-mode N-channel device in a TO-220 package, suitable for installations requiring a robust drain-source voltage rating and substantial continuous current handling. The component meets RoHS requirements and is rated for a wide thermal span suited to industrial conditions.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching applications
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching
Applications
• Suitable for motor-drive power stages
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks
What package type should I expect for PCB mounting?
It is supplied in a TO-220 through-hole package suitable for secure soldered mounting.
How does the channel type affect switching polarity?
The N-channel configuration requires positive gate drive relative to source for conduction.
Is this component intended for automotive qualification?
It is not specified to conform to automotive-grade standards.
What standard environmental restriction is adhered to?
The device complies with RoHS directives limiting certain hazardous substances.
Liens connexes
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