Infineon HEXFET Type N-Channel MOSFET, 43 A, 150 V Enhancement, 3-Pin TO-220 IRF3415PBF
- N° de stock RS:
- 542-9232
- Numéro d'article Distrelec:
- 303-41-275
- Référence fabricant:
- IRF3415PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
1,42 €
(TVA exclue)
1,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 178 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 376 unité(s) expédiée(s) à partir du 16 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,42 € |
| 10 - 49 | 1,28 € |
| 50 - 99 | 1,20 € |
| 100 - 249 | 1,13 € |
| 250 + | 1,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 542-9232
- Numéro d'article Distrelec:
- 303-41-275
- Référence fabricant:
- IRF3415PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341275 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30341275 | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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