Infineon HEXFET N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4814
- Référence fabricant:
- IRLZ44NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
44,80 €
(TVA exclue)
54,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 300 unité(s) expédiée(s) à partir du 02 novembre 2026
- Plus 800 unité(s) expédiée(s) à partir du 09 novembre 2026
- Plus 2 000 unité(s) expédiée(s) à partir du 03 décembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,896 € | 44,80 € |
| 100 - 200 | 0,663 € | 33,15 € |
| 250 - 450 | 0,618 € | 30,90 € |
| 500 - 950 | 0,573 € | 28,65 € |
| 1000 + | 0,528 € | 26,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4814
- Référence fabricant:
- IRLZ44NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF
This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.
Features & Benefits
• Supports continuous drain current up to 47A for effective power delivery
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency
Applications
• Power supply circuits requiring efficient load switching
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation
What is the operating temperature range of the device?
The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
How should this be mounted for optimal performance?
It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.
Can it be used with other power management components?
Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.
What are the implications of the gate threshold voltage range?
A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.
Is it suitable for high-frequency applications?
With a low gate charge of 48nC at 5V, it supports high-frequency switching applications, contributing to overall efficiency in power systems.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRLZ44NPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220