Infineon HEXFET N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4814
- Référence fabricant:
- IRLZ44NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
44,80 €
(TVA exclue)
54,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 4 000 unité(s) expédiée(s) à partir du 28 septembre 2026
- Plus 200 unité(s) expédiée(s) à partir du 28 septembre 2026
- Plus 2 000 unité(s) expédiée(s) à partir du 21 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,896 € | 44,80 € |
| 100 - 200 | 0,663 € | 33,15 € |
| 250 - 450 | 0,618 € | 30,90 € |
| 500 - 950 | 0,573 € | 28,65 € |
| 1000 + | 0,528 € | 26,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4814
- Référence fabricant:
- IRLZ44NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF
This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.
Features & Benefits
• Supports continuous drain current up to 47A for effective power delivery
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency
Applications
• Power supply circuits requiring efficient load switching
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation
What is the operating temperature range of the device?
The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
How should this be mounted for optimal performance?
It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.
Can it be used with other power management components?
Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.
What are the implications of the gate threshold voltage range?
A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.
Is it suitable for high-frequency applications?
With a low gate charge of 48nC at 5V, it supports high-frequency switching applications, contributing to overall efficiency in power systems.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRLZ44NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220