Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4898
Référence fabricant:: IRLZ34NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

52,70 €

(TVA exclue)

63,75 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

700 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 400 unité(s) expédiée(s) à partir du 12 janvier 2026
Plus 2 000 unité(s) expédiée(s) à partir du 02 juillet 2026

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Unité	Prix par unité	le tube*
50 - 50	1,054 €	52,70 €
100 - 200	0,822 €	41,10 €
250 - 450	0,769 €	38,45 €
500 - 1200	0,716 €	35,80 €
1250 +	0,664 €	33,20 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4898
Référence fabricant:: IRLZ34NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF

This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits

• Low on-resistance of 35mΩ reduces power loss

• High power dissipation capability of 68W enhances performance

• Operating temperature range from -55°C to +175°C ensures versatility

• Typical gate charge of 25nC at 5V enables faster switching

• Compact TO-220AB package enables efficient PCB layout

Applications

• Utilised in DC-DC converters for efficient power conversion

• Appropriate for motor driver circuits in industrial automation

• Effective in power management systems for renewable energy

• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?

The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?

The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?

Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?

A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

Is it compatible with various electronic circuits?

This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.