Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4804
- Référence fabricant:
- IRL3705NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
80,40 €
(TVA exclue)
97,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,608 € | 80,40 € |
| 100 - 200 | 1,463 € | 73,15 € |
| 250 - 450 | 1,367 € | 68,35 € |
| 500 - 950 | 1,27 € | 63,50 € |
| 1000 + | 1,174 € | 58,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4804
- Référence fabricant:
- IRL3705NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Height 9.02mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF
This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.
Features & Benefits
• Low Rds(on) of 10mΩ for increased efficiency
• Operates in enhancement mode for innovative circuit designs
• Fast switching capabilities for improved system responsiveness
• Fully avalanche rated for durability in demanding situations
Applications
• Suitable for industrial power management systems
• Ideal for motor drive in automation
• Compatible with power supplies that require low thermal resistance
• Utilised in DC-DC converters for enhanced energy efficiency
What is the maximum power dissipation capability?
The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.
Is it suitable for high temperatures?
This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.
What is the significance of the gate threshold voltage range?
The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.
What considerations are there for using this in a circuit?
Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRL3705NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220