Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4797
- Référence fabricant:
- IRFZ48NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
40,80 €
(TVA exclue)
49,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 200 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,816 € | 40,80 € |
| 100 - 200 | 0,62 € | 31,00 € |
| 250 - 450 | 0,579 € | 28,95 € |
| 500 - 1200 | 0,539 € | 26,95 € |
| 1250 + | 0,498 € | 24,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4797
- Référence fabricant:
- IRFZ48NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 130W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 130W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF
This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.
Features & Benefits
• Supports continuous drain currents of up to 64A
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions
Applications
• Driving inductive loads in automation systems
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency
What is the maximum power dissipation capability?
The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.
How does the operating temperature range affect performance?
The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.
Is this device compatible with standard PCB layouts?
Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.
What applications benefit most from this component's fast switching speed?
Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.
How should the device be handled during installation?
During installation, ensure proper mounting torque and avoid excessive soldering temperatures. It is recommended to adhere to standard safety guidelines to prevent damage.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFZ48NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFI3205PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220