Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4769
Référence fabricant:: IRFZ44NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

45,05 €

(TVA exclue)

54,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 600 unité(s) expédiée(s) à partir du 06 janvier 2026
Plus 2 000 unité(s) expédiée(s) à partir du 25 juin 2026

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Unité	Prix par unité	le tube*
50 - 50	0,901 €	45,05 €
100 - 200	0,739 €	36,95 €
250 - 450	0,685 €	34,25 €
500 - 1200	0,64 €	32,00 €
1250 +	0,595 €	29,75 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4769
Référence fabricant:: IRFZ44NPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	94W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.67mm
	Width	4.4 mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 94W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.67mm
	Width 4.4 mm
	Standards/Approvals No
	Automotive Standard No

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Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?

Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.