Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4763
Référence fabricant:: IRF3205PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

61,35 €

(TVA exclue)

74,25 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Stock limité

100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 - 50	1,227 €	61,35 €
100 - 200	0,982 €	49,10 €
250 - 450	0,921 €	46,05 €
500 - 950	0,859 €	42,95 €
1000 +	0,798 €	39,90 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4763
Référence fabricant:: IRF3205PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	146nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	200W
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Width	4.69 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 146nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 200W
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Width 4.69 mm
	Automotive Standard No

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Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF

This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.

Features & Benefits

• Capable of operating at high temperatures up to +175°C

• Offers fast switching characteristics for improved performance

• Excellent avalanche rating for added durability

• Enhancement mode design provides stable operation

• Designed for ease of use in through-hole mounting

Applications

• Used for power conversion in power supplies

• Suitable for motor control

• Utilised in battery management systems

• Applied in high-frequency switching circuits

• Integrated into consumer electronics power systems

What thermal characteristics should be considered for this component?

The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.

How can the specifications influence overall performance?

The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.

What methods can be applied for effective heat dissipation?

Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.