Infineon HEXFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 912-8687
- Référence fabricant:
- IRF2805PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
109,80 €
(TVA exclue)
132,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,196 € | 109,80 € |
| 100 - 200 | 2,086 € | 104,30 € |
| 250 - 450 | 1,998 € | 99,90 € |
| 500 - 950 | 1,867 € | 93,35 € |
| 1000 + | 1,757 € | 87,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 912-8687
- Référence fabricant:
- IRF2805PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF
This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.
Features & Benefits
• Supports a maximum continuous drain current of 75A
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience
Applications
• Used in industrial motor drives for effective power control
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles
What is the maximum temperature this component can withstand?
It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.
How does this MOSFET handle high current applications?
It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.
Can it be used in applications with fast switching requirements?
Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.
Is this device suitable for use in power inverters?
Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.
What are the implications of its low on-resistance?
The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220