Infineon HEXFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 912-8687
Référence fabricant:: IRF2805PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

65,00 €

(TVA exclue)

78,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 700 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le tube*
50 - 50	1,30 €	65,00 €
100 - 200	1,235 €	61,75 €
250 - 450	1,183 €	59,15 €
500 - 950	1,105 €	55,25 €
1000 +	1,04 €	52,00 €

*Prix donné à titre indicatif

N° de stock RS:: 912-8687
Référence fabricant:: IRF2805PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.7mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	330W
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	16.51mm
	Width	4.83 mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.7mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 330W
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 16.51mm
	Width 4.83 mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF

This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.

Features & Benefits

• Supports a maximum continuous drain current of 75A

• Enhances efficiency with a low RDS(on) of 4.7mΩ

• Compatible with +20 V/-20 V gate-source voltage for improved flexibility

• Capable of fast switching speeds to meet dynamic performance needs

• Supports repetitive avalanche handling for operational resilience

Applications

• Used in industrial motor drives for effective power control

• Suitable for power management in automation systems

• Employed in renewable energy systems for efficient switching

• Utilised in high-performance and durable power tools

• Applicable in battery management systems for electric vehicles

What is the maximum temperature this component can withstand?

It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.

How does this MOSFET handle high current applications?

It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.

Can it be used in applications with fast switching requirements?

Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.

Is this device suitable for use in power inverters?

Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.

What are the implications of its low on-resistance?

The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.