Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF
- N° de stock RS:
- 540-9777
- Numéro d'article Distrelec:
- 303-41-384
- Référence fabricant:
- IRFZ44NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,39 €
(TVA exclue)
1,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 263 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 818 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 24 | 1,39 € |
| 25 - 49 | 1,31 € |
| 50 - 99 | 1,28 € |
| 100 - 249 | 1,20 € |
| 250 + | 1,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 540-9777
- Numéro d'article Distrelec:
- 303-41-384
- Référence fabricant:
- IRFZ44NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 94W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.4mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 94W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.4mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF
This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.
Features & Benefits
• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
Applications
• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
What impact does the low resistance have on performance?
The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.
How does temperature affect the continuous drain current?
Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.
Can this component handle repetitive avalanche conditions?
Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.
What type of applications benefit most from using this MOSFET?
This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.
Is it compatible with standard PCB designs?
Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220