Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF
- N° de stock RS:
- 540-9783
- Numéro d'article Distrelec:
- 303-41-274
- Référence fabricant:
- IRF3205PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
1,46 €
(TVA exclue)
1,77 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,46 € |
| 10 - 49 | 1,33 € |
| 50 - 99 | 1,24 € |
| 100 - 249 | 1,15 € |
| 250 + | 1,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 540-9783
- Numéro d'article Distrelec:
- 303-41-274
- Référence fabricant:
- IRF3205PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 146nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341274 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 146nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30341274 | ||
Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF
This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.
Features & Benefits
• Capable of operating at high temperatures up to +175°C
• Offers fast switching characteristics for improved performance
• Excellent avalanche rating for added durability
• Enhancement mode design provides stable operation
• Designed for ease of use in through-hole mounting
Applications
• Used for power conversion in power supplies
• Suitable for motor control
• Utilised in battery management systems
• Applied in high-frequency switching circuits
• Integrated into consumer electronics power systems
What thermal characteristics should be considered for this component?
The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.
How can the specifications influence overall performance?
The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.
What methods can be applied for effective heat dissipation?
Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
