Vishay Isolated Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- N° de stock RS:
- 919-4189
- Référence fabricant:
- SI9945BDY-T1-GE3
- Fabricant:
- Vishay
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 919-4189
- Référence fabricant:
- SI9945BDY-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 72mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 5mm | |
| Height | 1.5mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 72mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 5mm | ||
Height 1.5mm | ||
- Pays d'origine :
- TW
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Liens connexes
- Vishay Isolated TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P 5.3 A 8-Pin SOIC SI4559ADY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P 5.3 A 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI4948BEY-T1-GE3
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4925DDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P 6 A 8-Pin SOIC SI4532CDY-T1-GE3
