Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263

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1 693,00 €

(TVA exclue)

2 049,00 €

(TVA incluse)

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la bobine*
1000 +1,693 €1 693,00 €

*Prix donné à titre indicatif

N° de stock RS:
911-0711
Référence fabricant:
SPB80P06PGATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

340W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

115nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.31mm

Width

9.45 mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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