Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 913-3831
Référence fabricant:: IRF1405PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

54,60 €

(TVA exclue)

66,05 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 - 50	1,092 €	54,60 €
100 - 200	1,038 €	51,90 €
250 - 450	0,994 €	49,70 €
500 - 950	0,928 €	46,40 €
1000 +	0,874 €	43,70 €

*Prix donné à titre indicatif

N° de stock RS:: 913-3831
Référence fabricant:: IRF1405PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	169A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	170nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	330W
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Length	10.67mm
	Height	8.77mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 169A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 170nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 330W
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Length 10.67mm
	Height 8.77mm
	Standards/Approvals No
	Automotive Standard No

Se connecter pour voir les modèles CAO

Pays d'origine :: PH

Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF

This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.

Features & Benefits

• Maximum continuous drain current of 169A enhances durability

• Rated for 55V, ensuring operation under high voltage conditions

• Low on-resistance of 5mΩ minimises power loss during operation

• Fast switching capability increases system efficiency

• Features enhancement mode for optimal operation

Applications

• Used in industrial motor drives for efficient control

• Suitable for high-current in power supplies

• Ideal for automation equipment driving motors

• Effective in converters and inverters for renewable energy systems

What is the maximum gate-to-source voltage limit?

The maximum gate-to-source voltage is ±20V, ensuring safe operation.

How does this device handle thermal management?

It operates effectively up to 175°C, providing reliability in high-temperature conditions.

What factors should be considered during installation?

Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.

Can it be used in switching applications?

Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.

What gate charge values can be expected during operation?

The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.