Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
- N° de stock RS:
- 543-1099
- Référence fabricant:
- IRF1405PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,45 €
(TVA exclue)
2,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,45 € |
| 10 - 24 | 2,34 € |
| 25 - 49 | 2,23 € |
| 50 - 99 | 2,09 € |
| 100 + | 1,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 543-1099
- Référence fabricant:
- IRF1405PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10.67mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.
Features & Benefits
• Maximum continuous drain current of 169A enhances durability
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation
Applications
• Used in industrial motor drives for efficient control
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems
What is the maximum gate-to-source voltage limit?
The maximum gate-to-source voltage is ±20V, ensuring safe operation.
How does this device handle thermal management?
It operates effectively up to 175°C, providing reliability in high-temperature conditions.
What factors should be considered during installation?
Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.
Can it be used in switching applications?
Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.
What gate charge values can be expected during operation?
The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220