Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- N° de stock RS:
- 787-9480
- Référence fabricant:
- SQD25N06-22L_GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
10,08 €
(TVA exclue)
12,195 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 25 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 1 880 unité(s) finale(s) expédiée(s) à partir du 08 janvier 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 2,016 € | 10,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 787-9480
- Référence fabricant:
- SQD25N06-22L_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Liens connexes
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