onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

582,00 €

(TVA exclue)

705,00 €

(TVA incluse)

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la bobine*
3000 +0,194 €582,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-2698
Référence fabricant:
FDC6305N
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

128mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960mW

Forward Voltage Vf

0.77V

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

3mm

Height

1mm

Width

1.7 mm

Number of Elements per Chip

2

Automotive Standard

No

The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.

Features and Benefits:


• Low gate charge

• Fast switching speed

• PowerTrench® technology

• Super small footprint. 72% smaller than a SO08.

The FDC6305N is typically used in these applications;

• Load switching

• DC/DC Converters

• Motor Driving

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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