onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C
- N° de stock RS:
- 761-4574
- Référence fabricant:
- NDC7001C
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
6,23 €
(TVA exclue)
7,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 30 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 430 unité(s) expédiée(s) à partir du 11 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,623 € | 6,23 € |
| 100 - 240 | 0,538 € | 5,38 € |
| 250 - 490 | 0,464 € | 4,64 € |
| 500 - 990 | 0,409 € | 4,09 € |
| 1000 + | 0,372 € | 3,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-4574
- Référence fabricant:
- NDC7001C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 960mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 960mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.
Features and benefits:
• DMOS Technology
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
NDC7001C MOSFETs are ideal for;
• Low voltage
• Low current
• Switching
• Power supplies
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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