onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

N° de stock RS:: 761-4574
Référence fabricant:: NDC7001C
Fabricant:: onsemi

onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

Offre groupée disponible

Sous-total (1 paquet de 10 unités)*

3,72 €

(TVA exclue)

4,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

30 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 1 430 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le paquet*
10 - 90	0,372 €	3,72 €
100 - 240	0,32 €	3,20 €
250 - 490	0,278 €	2,78 €
500 - 990	0,245 €	2,45 €
1000 +	0,222 €	2,22 €

*Prix donné à titre indicatif

N° de stock RS:: 761-4574
Référence fabricant:: NDC7001C
Fabricant:: onsemi

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	510mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	1.1nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	960mW
	Minimum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Width	1.7 mm
	Standards/Approvals	No
	Height	1mm
	Length	3mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 510mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 1.1nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 960mW
	Minimum Operating Temperature 150°C
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Width 1.7 mm
	Standards/Approvals No
	Height 1mm
	Length 3mm
	Number of Elements per Chip 2
	Automotive Standard No

The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.

Features and benefits:

• DMOS Technology

• High saturation current

• High density cell design

• Copper lead frame for superior thermal and electrical capabilities

NDC7001C MOSFETs are ideal for;

• Low voltage

• Low current

• Switching

• Power supplies

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.