Infineon HEXFET Type N-Channel MOSFET, 5.8 A, 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF

N° de stock RS:: 737-7219
Numéro d'article Distrelec:: 304-45-306
Référence fabricant:: IRFML8244TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.8 A, 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF

Sous-total (1 paquet de 20 unités)*

3,90 €

(TVA exclue)

4,72 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

54 100 unité(s) expédiée(s) à partir du 03 septembre 2026

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Unité	Prix par unité	le paquet*
20 +	0,195 €	3,90 €

*Prix donné à titre indicatif

N° de stock RS:: 737-7219
Numéro d'article Distrelec:: 304-45-306
Référence fabricant:: IRFML8244TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	25V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.25W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	5.4nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.02mm
	Width	1.4mm
	Length	3.04mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 25V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.25W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 5.4nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.02mm
	Width 1.4mm
	Length 3.04mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 25V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - IRFML8244TRPBF

This MOSFET is a compact N-channel enhancement device designed for surface-mount power switching and signal-level control in compact electronic assemblies. It operates over a wide temperature span suitable for demanding environments and is intended for use where low conduction losses and modest power handling are required. The package supports three-pin SOT-23 mounting for space-constrained board layouts.

Features and Benefits:

• Low on-resistance 41mΩ reduces conduction losses
• Continuous drain current 5.8A supports higher load currents
• Drain-source voltage 25V enables medium-voltage switching
• Typical gate charge 5.4nC allows fast gate transitions
• Forward voltage 1.2V minimises voltage drop under load
• Maximum power dissipation 1.25W manages thermal budget

Applications

• Suitable for compact DC-DC step-down converters
• Ideal for portable power-management modules
• Used with motor drivers for small actuator control
• Can be used for battery protection and charging circuits
• Suitable for high-density consumer electronics boards

What are the thermal limits for operation?

The device is rated to function between -55°C and 150°C, enabling operation across low-temperature starts and elevated ambient conditions.

What gate voltage extremes should be avoided?

Gate-source voltage must not exceed 20V to prevent device stress or damage.

How many pins and what mounting style does it use?

It is supplied as a three-pin component intended for surface-mount assembly in a SOT-23 footprint.

What conduction and switching trade-offs does it present?

The combination of 41mΩ on-resistance and 5.4nC gate charge balances low conduction losses with moderate gate-drive requirements for efficient switching.