Infineon HEXFET N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 913-4070
Référence fabricant:: IRLML6346TRPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

324,00 €

(TVA exclue)

393,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

3 000 unité(s) expédiée(s) à partir du 15 octobre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,108 €	324,00 €

*Prix donné à titre indicatif

N° de stock RS:: 913-4070
Référence fabricant:: IRLML6346TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12V
	Typical Gate Charge Qg @ Vgs	2.9nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Height	1.02mm
	Standards/Approvals	No
	Width	1.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12V
	Typical Gate Charge Qg @ Vgs 2.9nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Height 1.02mm
	Standards/Approvals No
	Width 1.4mm
	Automotive Standard No

Pays d'origine :: PH

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.4A Maximum Continuous Drain Current - IRLML6346TRPBF

This MOSFET is a compact N-channel enhancement-mode transistor designed for surface-mount power switching and management in compact electronic assemblies. It operates across a wide ambient range and is intended for low-voltage DC switching tasks where efficient conduction and modest power dissipation are required.

Features and Benefits:

• Low conduction resistance of 80mΩ enabling reduced I2R losses
• Continuous drain current rating of 3.4A allowing moderate load handling
• Drain‑source voltage capability of 30V for low-voltage power rails
• Gate charge of 2.9nC supporting fast gate transitions
• Gate withstand of 12V permitting standard drive voltages
• Maximum power dissipation 1.3W supporting sustained switching

Applications

• Suitable for DC-DC converter switching stages
• Ideal for battery management and power-rail control
• Used with motor-driver gate stages in compact devices
• Can be used for load-switching in portable electronics
• Appropriate for general-purpose power management on SMD boards

What thermal limits should be considered in design?

The device functions from -55°C up to 150°C, so thermal planning must account for ambient plus junction rise and ensure adequate PCB copper or heatsinking to maintain junction temperatures within that range.

How does the package type affect assembly and layout?

The SOT-23 surface-mount package requires minimal board space and standard pick-and-place processes

layout should include short thermal and current traces to exploit conduction performance.

What switching behaviour can be expected during fast transitions?

With a typical gate charge of 2.9nC, gate driver sizing should match desired rise/fall times to balance switching losses and EMI for fast-edge applications.

Are there constraints on gate drive voltage?

The gate may be driven up to 12V maximum

designs should limit gate amplitude to avoid exceeding this rating while ensuring reliable enhancement.