Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 913-4048
- Référence fabricant:
- IRLML0060TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
324,00 €
(TVA exclue)
393,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 66 000 unité(s) expédiée(s) à partir du 14 août 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,108 € | 324,00 € |
| 6000 - 6000 | 0,102 € | 306,00 € |
| 9000 + | 0,096 € | 288,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-4048
- Référence fabricant:
- IRLML0060TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 2.7A Maximum Continuous Drain Current - IRLML0060TRPBF
This MOSFET is a compact N-channel enhancement device designed for low-voltage switching and power management in surface-mount applications. It operates across a wide temperature span suitable for demanding thermal environments and is intended for footprint-conscious circuit designs where efficient conduction and controlled gate drive are required.
Features and Benefits:
• Low on-resistance 92mΩ reduces conduction losses
• Handles continuous drain current 2.7A for moderate loads
• Rated drain-source voltage 60V for robust voltage headroom
• Typical gate charge 2.5nC enables fast, efficient switching
• Maximum power dissipation 1.25W limits thermal stress
• Gate-source tolerance 16V permits flexible drive voltages
• Handles continuous drain current 2.7A for moderate loads
• Rated drain-source voltage 60V for robust voltage headroom
• Typical gate charge 2.5nC enables fast, efficient switching
• Maximum power dissipation 1.25W limits thermal stress
• Gate-source tolerance 16V permits flexible drive voltages
Applications
• Suitable for DC-DC converters in compact electronics
• Ideal for high-side or low-side switching in controllers
• Used for load switching in battery-powered systems
• Can be used for motor-driver front end in small actuators
• Useful in power-path management on dense PCBs
• Ideal for high-side or low-side switching in controllers
• Used for load switching in battery-powered systems
• Can be used for motor-driver front end in small actuators
• Useful in power-path management on dense PCBs
What thermal extremes can it tolerate during operation?
It is specified to operate between -55°C and 150°C, allowing use in both cold-start and high-temperature environments without derating the electrical specification beyond standard guidelines.
How does the device behave under limited gate drive amplitude?
With a maximum gate-source rating of 16V and typical forward voltage around 1.3V, it can be driven from common logic-level drivers while maintaining controlled conduction characteristics.
What mounting considerations are necessary for effective cooling?
As a SOT-23 surface-mount device with 1.25W maximum dissipation, thermal performance depends on PCB copper area and thermal vias
expanding copper around the pad improves heat spreading.
How does its switching suitability relate to gate charge?
The modest gate charge of 2.5nC minimises drive energy and allows faster transitions with lower gate-driver demand, which is beneficial for switching applications with limited drive capability.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF
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- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
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