Infineon HEXFET Type N-Channel MOSFET, 5.8 A, 25 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 165-7765
- Référence fabricant:
- IRFML8244TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
195,00 €
(TVA exclue)
237,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 54 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,065 € | 195,00 € |
| 6000 - 6000 | 0,062 € | 186,00 € |
| 9000 + | 0,059 € | 177,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-7765
- Référence fabricant:
- IRFML8244TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 25V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - IRFML8244TRPBF
This MOSFET is a compact N-channel enhancement device designed for surface-mount power switching and signal-level control in compact electronic assemblies. It operates over a wide temperature span suitable for demanding environments and is intended for use where low conduction losses and modest power handling are required. The package supports three-pin SOT-23 mounting for space-constrained board layouts.
Features and Benefits:
• Low on-resistance 41mΩ reduces conduction losses
• Continuous drain current 5.8A supports higher load currents
• Drain-source voltage 25V enables medium-voltage switching
• Typical gate charge 5.4nC allows fast gate transitions
• Forward voltage 1.2V minimises voltage drop under load
• Maximum power dissipation 1.25W manages thermal budget
• Continuous drain current 5.8A supports higher load currents
• Drain-source voltage 25V enables medium-voltage switching
• Typical gate charge 5.4nC allows fast gate transitions
• Forward voltage 1.2V minimises voltage drop under load
• Maximum power dissipation 1.25W manages thermal budget
Applications
• Suitable for compact DC-DC step-down converters
• Ideal for portable power-management modules
• Used with motor drivers for small actuator control
• Can be used for battery protection and charging circuits
• Suitable for high-density consumer electronics boards
• Ideal for portable power-management modules
• Used with motor drivers for small actuator control
• Can be used for battery protection and charging circuits
• Suitable for high-density consumer electronics boards
What are the thermal limits for operation?
The device is rated to function between -55°C and 150°C, enabling operation across low-temperature starts and elevated ambient conditions.
What gate voltage extremes should be avoided?
Gate-source voltage must not exceed 20V to prevent device stress or damage.
How many pins and what mounting style does it use?
It is supplied as a three-pin component intended for surface-mount assembly in a SOT-23 footprint.
What conduction and switching trade-offs does it present?
The combination of 41mΩ on-resistance and 5.4nC gate charge balances low conduction losses with moderate gate-drive requirements for efficient switching.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF
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- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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