Infineon HEXFET N-Channel MOSFET, 1.6 A, 100 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 913-4054
- Référence fabricant:
- IRLML0100TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
294,00 €
(TVA exclue)
357,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 3 000 unité(s) expédiée(s) à partir du 16 septembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,098 € | 294,00 € |
| 6000 - 6000 | 0,093 € | 279,00 € |
| 9000 + | 0,088 € | 264,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-4054
- Référence fabricant:
- IRLML0100TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 1.6A Maximum Continuous Drain Current - IRLML0100TRPBF
This MOSFET is a surface-mount N-channel enhancement transistor designed for switching and power-control tasks in compact electronic assemblies. It operates across a wide temperature span and is intended for low-to-moderate current applications where a balance of voltage capability and small footprint is required.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching capability
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages
Applications
• Suitable for DC-DC converter switching stages
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices
What environmental temperature range can it withstand during operation?
It is rated to operate from -55°C up to 150°C, covering demanding thermal conditions.
What mounting and package considerations should designers plan for?
It comes in a SOT-23 surface-mount package, allowing automated assembly and dense PCB placement.
How does its forward voltage affect switching in rectifier or synchronous applications?
The device exhibits a forward voltage of 1.3V which influences conduction drop when used as a switching transistor in low-voltage circuits.
What pin count and gate-drive implications must be considered?
With three pins, standard gate, drain and source connections apply and a gate drive below the 16V rating should be used to avoid overstress.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23