Infineon HEXFET N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 913-4073
- Référence fabricant:
- IRLML6344TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
474,00 €
(TVA exclue)
573,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 3 000 unité(s) expédiée(s) à partir du 14 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,158 € | 474,00 € |
| 6000 - 6000 | 0,15 € | 450,00 € |
| 9000 + | 0,14 € | 420,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-4073
- Référence fabricant:
- IRLML6344TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF
This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.
Features & Benefits
• Offers a continuous drain current of 5A for robust performance
• Maximum drain-source voltage of 30V supports various requirements
• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses
• Wide gate threshold voltage range enables flexible operation
• Efficient power dissipation capability of 1.3W enhances reliability
Applications
• Ideal for microcontroller load switching in electronic systems
• Used in power management solutions for automotive
• Effective in DC-DC converters for efficient energy conversion
• Suitable for battery management systems to improve performance
• Effective in motor control circuits for automation tasks
What is the significance of the low RDS(on) value?
The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.
What voltage range can be applied to the gate-source junction?
The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.
How does the device perform under high temperatures?
With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.
What benefits does the surface mount design provide?
The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.
Liens connexes
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