Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 919-4735
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
285,00 €
(TVA exclue)
345,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,095 € | 285,00 € |
| 6000 - 6000 | 0,09 € | 270,00 € |
| 9000 + | 0,086 € | 258,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4735
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 540mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 540mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.
Features & Benefits
• Supports a maximum continuous drain current of 1.2A for effective performance
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C
Applications
• Utilised in DC-DC converters for effective energy management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management
What is the optimal gate voltage for operation?
The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.
How does it perform in high temperatures?
This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.
Can it handle pulsed drain currents?
Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.
What mounting type is recommended for this device?
Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.
What precautions should be taken during installation?
Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.
Liens connexes
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