Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

273,00 €

(TVA exclue)

330,00 €

(TVA incluse)

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  • Expédition à partir du 18 mai 2026
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Unité
Prix par unité
la bobine*
3000 - 30000,091 €273,00 €
6000 - 60000,086 €258,00 €
9000 +0,083 €249,00 €

*Prix donné à titre indicatif

N° de stock RS:
919-4735
Référence fabricant:
IRLML2803TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

3.3nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

540mW

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4 mm

Standards/Approvals

No

Length

3.04mm

Automotive Standard

AEC-Q101

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF


This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits


• Supports a maximum continuous drain current of 1.2A for effective performance

• High maximum drain-source voltage of 30V allows for versatile usage

• Low maximum drain-source resistance of 250mΩ minimises power losses

• Enhancement mode operation enables efficient switching capabilities

• Compact SOT-23 package is ideal for space-constrained applications

• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications


• Utilised in DC-DC converters for effective energy management

• Employed in motor control circuits for improved precision

• Suitable for power supply switching in consumer electronics

• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?


The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?


This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?


Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?


Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

What precautions should be taken during installation?


Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.

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