Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 919-4735
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
216,00 €
(TVA exclue)
261,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 6 000 unité(s) expédiée(s) à partir du 27 août 2026
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,072 € | 216,00 € |
| 6000 - 6000 | 0,068 € | 204,00 € |
| 9000 + | 0,066 € | 198,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4735
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 540mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 540mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
Features & Benefits
Applications
What is the optimal gate voltage for operation?
How does it perform in high temperatures?
Can it handle pulsed drain currents?
What mounting type is recommended for this device?
What precautions should be taken during installation?
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
