Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 913-4045
- Référence fabricant:
- IRLB8743PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
29,30 €
(TVA exclue)
35,45 €
(TVA incluse)
Ajouter 150 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 4 800 unité(s) expédiée(s) à partir du 18 février 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,586 € | 29,30 € |
| 100 - 200 | 0,57 € | 28,50 € |
| 250 - 450 | 0,555 € | 27,75 € |
| 500 - 1200 | 0,541 € | 27,05 € |
| 1250 + | 0,528 € | 26,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-4045
- Référence fabricant:
- IRLB8743PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220