Infineon HEXFET Type N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IRFB4228PBF
- N° de stock RS:
- 124-9007
- Référence fabricant:
- IRFB4228PBF
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
132,00 €
(TVA exclue)
159,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 2,64 € | 132,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-9007
- Référence fabricant:
- IRFB4228PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Length | 1.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Length 1.3mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IPP111N15N3GXKSA1
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220