Infineon HEXFET N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFZ48NPBF
- N° de stock RS:
- 540-9957
- Référence fabricant:
- IRFZ48NPBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
1,70 €
(TVA exclue)
2,06 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 127 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 222 unité(s) expédiée(s) à partir du 19 octobre 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,70 € |
| 10 - 49 | 1,51 € |
| 50 - 99 | 1,40 € |
| 100 - 249 | 1,32 € |
| 250 + | 1,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 540-9957
- Référence fabricant:
- IRFZ48NPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF
Features & Benefits
Applications
What is the maximum power dissipation capability?
How does the operating temperature range affect performance?
Is this device compatible with standard PCB layouts?
What applications benefit most from this component's fast switching speed?
How should the device be handled during installation?
Liens connexes
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- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
