Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247

N° de stock RS:: 919-4808
Référence fabricant:: IRFP064NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247

Sous-total (1 tube de 25 unités)*

48,10 €

(TVA exclue)

58,20 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

125 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
25 +	1,924 €	48,10 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4808
Référence fabricant:: IRFP064NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	5.3mm
	Height	20.3mm
	Length	15.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 5.3mm
	Height 20.3mm
	Length 15.9mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF

This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.

Features & Benefits

• Low on-resistance of 8mΩ enhances efficiency

• Maximum power dissipation of 200W ensures robust operation

• Capable of withstanding operating temperatures up to +175°C

• Versatile, compatible with both negative and positive gate-source voltages

• Single transistor configuration supports a variety of applications

Applications

• Used in power supply circuits that require high efficiency

• Common in motor control systems for automation

• Appropriate for telecommunications equipment

• Effective in power conversion systems in industrial environments

What is the maximum power dissipation for this component?

The maximum power dissipation is 200W, which supports robust performance across diverse applications.

Can it operate in high-temperature environments?

Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.

What type of gate voltage is required for operation?

This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.

How does the channel type influence its performance?

The N-channel type is beneficial for applications needing efficient switching and high current handling.

Is it suitable for through-hole design integrations?

Yes, it has a TO-247AC package with a through-hole mounting type, making installation straightforward in various setups.