Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247

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Sous-total (1 tube de 25 unités)*

51,925 €

(TVA exclue)

62,825 €

(TVA incluse)

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Prix par unité
le tube*
25 +2,077 €51,93 €

*Prix donné à titre indicatif

N° de stock RS:
919-4808
Référence fabricant:
IRFP064NPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

170nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.3mm

Length

15.9mm

Width

5.3 mm

Automotive Standard

No

Pays d'origine :
MX

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF


This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.

Features & Benefits


• Low on-resistance of 8mΩ enhances efficiency

• Maximum power dissipation of 200W ensures robust operation

• Capable of withstanding operating temperatures up to +175°C

• Versatile, compatible with both negative and positive gate-source voltages

• Single transistor configuration supports a variety of applications

Applications


• Used in power supply circuits that require high efficiency

• Common in motor control systems for automation

• Appropriate for telecommunications equipment

• Effective in power conversion systems in industrial environments

What is the maximum power dissipation for this component?


The maximum power dissipation is 200W, which supports robust performance across diverse applications.

Can it operate in high-temperature environments?


Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.

What type of gate voltage is required for operation?


This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.

How does the channel type influence its performance?


The N-channel type is beneficial for applications needing efficient switching and high current handling.

Is it suitable for through-hole design integrations?


Yes, it has a TO-247AC package with a through-hole mounting type, making installation straightforward in various setups.

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