Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- N° de stock RS:
- 279-9927
- Référence fabricant:
- SIHP155N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
8,50 €
(TVA exclue)
10,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,25 € | 8,50 € |
| 10 - 28 | 4,165 € | 8,33 € |
| 30 - 98 | 4,07 € | 8,14 € |
| 100 + | 3,995 € | 7,99 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9927
- Référence fabricant:
- SIHP155N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHP155N60EF-GE3
This MOSFET is a high-voltage, N-channel transistor designed for power switching in industrial and electronic control environments. It operates as an enhancement-mode device in a through-hole TO-220 package, providing robust power handling for applications requiring substantial drain-source voltage and thermal endurance.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching capability
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies
What gate drive considerations are required for reliable switching?
The gate tolerance is ±30V maximum, so gate drivers should respect this limit and provide sufficient drive current to charge the 38 nC typical gate charge for controlled switching speeds.
How should thermal management be arranged for continuous operation?
With 179W maximum power dissipation and TO-220 mounting, secure the device to an appropriate heatsink and ensure adequate airflow to maintain junction temperatures within the -55 °C to 150 °C operating range.
What electrical limits must be observed during design?
The transistor must not be subjected to drain-source voltages above 600V or continuous drain currents above 21 A to avoid exceeding device ratings.
Which package and mounting style does the device use for PCB or chassis integration?
It is supplied in a through-hole TO-220AB package with three pins, allowing secure chassis mounting and straightforward replacement in legacy designs.
Liens connexes
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