Vishay Single EF 1 N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
- N° de stock RS:
- 180-7349
- Référence fabricant:
- SIHP21N60EF-GE3
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 180-7349
- Référence fabricant:
- SIHP21N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.176Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.52mm | |
| Height | 6.71mm | |
| Length | 14.4mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.176Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 10.52mm | ||
Height 6.71mm | ||
Length 14.4mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay SIHP21N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-220AB package. It is offers drain to source resistance (RDS.) of 0.176ohms at 10VGS. Maximum drain current 21A.
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM
Low figure-of-merit (FOM): Ron x Qg
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