Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- N° de stock RS:
- 279-9911
- Référence fabricant:
- SIHG155N60EF-GE3
- Fabricant:
- Vishay
Sous-total (1 tube de 25 unités)*
72,925 €
(TVA exclue)
88,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 450 unité(s) expédiée(s) à partir du 28 août 2026
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 75 | 2,917 € | 72,93 € |
| 100 + | 2,593 € | 64,83 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9911
- Référence fabricant:
- SIHG155N60EF-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
Vishay SIHG Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHG155N60EF-GE3
Features and Benefits:
• 21A continuous drain current supports substantial load drive
• 0.159 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows high-power operation
• 38 nC typical gate charge improves switching-speed control
• 30V gate-source limit ensures compatibility with common drive voltages
Applications
• Ideal for high-voltage motor drives and inverters
• Used for power-factor-correction modules in large systems
• Can be used for high-power audio amplification switching stages
• Appropriate for laboratory power-electronics prototyping
What thermal range can it withstand during operation?
How is it mounted and connected on hardware?
What type of channel and conduction mode does it employ?
Are there specific approval standards noted for this component?
Liens connexes
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